Designed and carefully manufactured in the USA. Industry standard DeviceNet/PLC automation control. Industry proven and versatile DC/PDC/RF magnetron deposition processes.

    Industry proven thin film equipment with high throughput and long-term reliability.

    Simple and elegant vacuum design, carefully manufactured in the USA to ensure high quality for vacuum processes.

    Industry standard DeviceNet/PLC automation control.

    Industry proven and versatile DC/PDC/RF magnetron deposition (reactive, non-reactive) processes.

    Low cost of ownership (CoO) with ease of maintenance, and high availability of Commercial off the Shelf (COTS) parts with extensive documentation.

    Optimized magnetron for RF magnetron high rate Al2O3 deposition, and thick magnetic sputtering target (~4mm for NiFe) to increase productivity.

    Windows based user-friendly, SEMI standard GUI software.

Production Thin Film Process

   Oxides: Al2O3, Ta2O5, SiO2, CrSiOx, ITO

   Nitrides: AlN, SiN, TiN, CrN, FeN, FeAlN

   Carbides: SiC, Carbon

   Silicides: AlSi, TiSi

   Metals: Cr, Ru, Au, Ag, Cu, Ti, Ni, Al, W, Rh, In, Sn, NiCr, NiCu, CrCu, AlCu, TiW

   Magnetic Materials: CoFe, CoNiFe, NiFe, NiFeB, NiFeNb, CoCr, CoPt, CoCrPt

Production Thin Film Samples

RF Magnetron Sputtered Al₂O₃

RF Magnetron Sputtered Al2O3

   RF Magnetron sputtered Al2O3 deposition rate is typically >800A/min, ~50% higher than pure RF sputtered

   Wafer surface temperature < 50oC during process with backside cooling

   High throughput for up to ~3μm film deposition
Reactive Sputtered SiO₂ film

Reactive Sputtered SiO2 film

   Reactive sputtered SiO2 film has typical deposition rate >60nm/min; thickness uniformity 1σ<0.5%; Optimized Optical Loss for ~1um film < 5db/cm

   Full-face sputtering with no particle contamination and high target usage
DC Magnetron Sputtered NiFe film

DC Magnetron Sputtered NiFe film

   Magnetic NiFe film has deposition rate ~15A/s/kW; thickness uniformity 1σ<1%

   Excellent magnetic softness with Hc_h < 0.2Oe, Hk_h < 5Oe; Sqr_h < 5%
Reactive Sputtered AlN film

Reactive Sputtered AlN film

   Reactive sputtered AlN film has deposition rate ~3A/s/kW; thickness uniformity 1σ<1%; Refractive index around 1.94

   Reactive sputtered AlN film has typically (002) oriented column structure, with thermal conductivity around 30~50 W/m-K

   Optimizing film properties via substrate biasing and heating up to 400oC