Cluster PVD

pvdprodimg

 

 

, and carefully manufactured in the USA. Industry standard DeviceNet/PLC automation control. Industry proven and versatile DC/PDC/RF magnetron deposition processes.

 


Features


  • Industry proven thin film equipment with high throughput and long term reliability.
  • Simple and elegant vacuum design, and carefully manufactured in the USA to ensure high quality for vacuum processes.
  • Industry standard DeviceNet/PLC automation control.
  • Industry proven and versatile DC/PDC/RF magnetron deposition (reactive, non-reactive) processes.
  • Low CoO with ease of maintenance, and high availability of Commercial off the Shelf (COTS) parts with extensive documentation.
  • Optimized magnetron for RF magnetron high rate Al2O3 deposition, and thick magnetic sputtering target (~4mm for NiFe) to increase productivity.
  • Windows based user-friendly, SEMI standard GUI software.

Technical Specifications



Applications



     Production Thin Film Process
  • Oxides: Al2O3, Ta2O5, SiO2, CrSiOx, ITO
  • Nitrides: AlN, SiN, TiN, CrN, FeN, FeAlN
  • Carbides: SiC, Carbon
  • Silicides: AlSi, TiSi
  • Metals: Cr, Ru, Au, Ag, Cu, Ti, Ni, Al, W, Rh, In, Sn, NiCr, NiCu, CrCu, AlCu, TiW
  • Magnetic Materials: CoFe, CoNiFe, NiFe, NiFeB, NiFeNb, CoCr, CoPt, CoCrPt
     Production Thin Film Samples
 
RF Magnetron Sputtered Al₂O₃
 
 
RF Magnetron Sputtered Al2O3

  • RF Magnetron sputtered Al2O3 deposition rate is typically >800A/min, ~50% higher than pure RF sputtered
  • Wafer surface temperature < 50oC during process with backside cooling
  • High throughput for up to ~3μm film deposition
 
Reactive Sputtered SiO₂ film
 
 
Reactive Sputtered SiO2 film

  • Reactive sputtered SiO2 film has typical deposition rate >60nm/min; thickness uniformity 1σ<0.5%; Optimized Optical Loss for ~1um film < 5db/cm
  • Full-face sputtering with no particle contamination and high target usage
 
DC Magnetron Sputtered NiFe film
 
 
DC Magnetron Sputtered NiFe film

  • Magnetic NiFe film has deposition rate ~15A/s/kW; thickness uniformity 1σ<1%
  • Excellent magnetic softness with Hc_h < 0.2Oe, Hk_h < 5Oe; Sqr_h < 5%
 
Reactive Sputtered AlN film
 
 
Reactive Sputtered AlN film

  • Reactive sputtered AlN film has deposition rate ~3A/s/kW; thickness uniformity 1σ<1%; Refractive index around 1.94
  • Reactive sputtered AlN film has typically (002) oriented column structure, with thermal conductivity around 30~50 W/m-K
  • Optimizing film properties via substrate biasing and heating up to 400oC

Gallery



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